absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 1.0 i d @ v gs = 10v, t c = 100c continuous drain current 0.6 i dm pulsed drain current 4.0 p d @ t c = 25c max. power dissipation 1.4 w linear derating factor 0.011 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 75 mj i ar avalanche current 1.0 a e ar repetitive avalanche energy 0.14 mj dv/dt peak d iode recovery dv/dt 5.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.63 in./1.6 mm from case for 10s) weight 1.3 (t ypical) g hexfet ? mosfet technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry design achieves very low on-state resistance combined with high transconductance. hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistor?s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. c a power mosfet thru-hole (mo-036ab) www.irf.com 1 mo-036ab product summary part number r ds(on) i d irfg110 0.7 ? 1.0a features: simple drive requirements ease of paralleling hermetically sealed electrically isolated dynamic dv/dt rating light-weight for footnotes refer to the last page irfg110 jantx2n7334 jantxv2n7334 ref:mil-prf-19500/597 100v, quad n-channel hexfet ? mosfet technology pd-90396h
irfg110 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 100 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.13 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.7 v gs = 10v, i d = 0.6a resistance ? ? 0.8 v gs = 10v, i d = 1.0a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 0.86 ? ? s v ds > 15v, i ds = 0.6a i dss zero gate voltage drain current ? ? 25 v ds = 80v ,v gs =0v ? ? 250 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 15 v gs =10v, i d = 1.0a q gs gate-to-source charge ? ? 7.5 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 7.5 t d (on) turn-on delay time ? ? 20 v dd = 50v, i d = 1.0a, t r rise time ? ? 25 v gs =10v, r g = 7.5 ? t d (off) turn-off delay time ? ? 40 t f fall time ? ? 40 l s + l d total inductance ? 10 ? c iss input capacitance ? 180 ? v gs = 0v, v ds = 25v c oss output capacitance ? 82 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 15 ? na nh ns a note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 17 r thja junction-to-ambient ? ? 90 typi cal socket mount c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 1.0 i sm pulse source current (body diode) ? ? 4.0 v sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 1.0a, v gs = 0v t rr reverse recovery time ? ? 200 ns t j = 25c, i f = 1.0a, di/dt 100a/ s q rr reverse recovery charge ? ? 0.83 c v dd 30v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a ? measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package)
www.irf.com 3 irfg110 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics
irfg110 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) dc
www.irf.com 5 irfg110 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1
0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature
irfg110 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circui t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . 10 v gs
www.irf.com 7 irfg110 i sd 1.0a, di/dt 75a/ s, v dd 100v, t j 150c pulse width 300 s; duty cycle 2% repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 150mh peak i l = 1.0a, v gs = 10v footnotes: case outline and dimensions ? mo-036ab ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2010 g3 g4 g2 g1 g3 g4 g2 g1
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